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IDT54/74FCT827AT/BT/CT/DT, IDT54/74FCT2827AT/BT/CT HIGH-PERFORMANCE CMOS BUFFERS MILITARY AND COMMERCIAL TEMPERATURE RANGES FAST CMOS 10-BIT BUFFERS Integrated Device Technology, Inc. IDT54/74FCT827AT/BT/CT/DT IDT54/74FCT2827AT/BT/CT FEATURES: * Common features: - Low input and output leakage 1A (max.) - CMOS power levels - True TTL input and output compatibility - VOH = 3.3V (typ.) - VOL = 0.3V (typ.) - Meets or exceeds JEDEC standard 18 specifications - Product available in Radiation Tolerant and Radiation Enhanced versions - Military product compliant to MIL-STD-883, Class B and DESC listed (dual marked) - Available in DIP, SOIC, SSOP, QSOP, CERPACK and LCC packages * Features for FCT827T: - A, B, C and D speed grades - High drive outputs (-15mA IOH, 48mA IOL) * Features for FCT2827T: - A, B and C speed grades - Resistor outputs (-15mA IOH, 12mA IOL Com.) (-12mA IOH, 12mA IOL Mil.) - Reduced system switching noise DESCRIPTION: The FCT827T is built using an advanced dual metal CMOS technology. The FCT827T/FCT2827T 10-bit bus drivers provide highperformance bus interface buffering for wide data/address paths or buses carrying parity. The 10-bit buffers have NANDed output enables for maximum control flexibility. All of the FCT827T high-performance interface family are designed for high-capacitance load drive capability, while providing low-capacitance bus loading at both inputs and outputs. All inputs have clamp diodes to ground and all outputs are designed for low-capacitance bus loading in high-impedance state. The FCT2827T has balanced output drive with current limiting resistors. This offers low ground bounce, minimal undershoot and controlled output fall times-reducing the need for external series terminating resistors. FCT2827T parts are plug-in replacements for FCT827T parts. FUNCTIONAL BLOCK DIAGRAM Y0 Y1 Y2 Y3 Y4 Y5 Y6 Y7 Y8 Y9 D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 OE1 OE2 2573 drw 01 The IDT logo is a registered trademark of Integrated Device Technology, Inc. MILITARY AND COMMERCIAL TEMPERATURE RANGES (c)1995 Integrated Device Technology, Inc. AUGUST 1995 DSC-4217/5 6.22 6.22 1 1 IDT54/74FCT827AT/BT/CT/DT, IDT54/74FCT2827AT/BT/CT HIGH-PERFORMANCE CMOS BUFFERS MILITARY AND COMMERCIAL TEMPERATURE RANGES PIN CONFIGURATIONS INDEX 2573 drw 02 D8 D9 GND NC OE2 Y9 Y8 OE1 D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 GND 1 2 3 P24-1 4 D24-1 5 SO24-2 6 SO24-7 7 SO24-8 & 8 9 E24-1 10 11 12 24 23 22 21 20 19 18 17 16 15 14 13 VCC Y0 Y1 Y2 Y3 Y4 Y5 Y6 Y7 Y8 Y9 OE2 D2 D3 D4 NC D5 D6 D7 432 1 28 27 26 25 5 24 6 23 7 8 22 L28-1 9 21 20 10 19 11 1213 14 15 16 17 18 D1 D0 OE1 NC VCC Y0 Y1 Y2 Y3 Y4 NC Y5 Y6 Y7 2573 drw 03 DIP/SOIC/SSOP/QSOP/CERPACK TOP VIEW LCC TOP VIEW PIN DESCRIPTION Names I/O FUNCTION TABLE(1) Inputs Output DI L H X X YI L H Z Z Function Transparent Three-State 2573 tbl 02 OEI DI YI I I O Description When both are LOW the outputs are enabled. When either one or both are HIGH the outputs are High Z. 10-bit data input. 10-bit data output. 2573 tbl 01 OE OE1 L L H X OE OE2 L L X H NOTE: 1. H = HIGH, L = LOW, X = Don't Care, Z = High Impedance ABSOLUTE MAXIMUM RATINGS(1) Symbol Rating Commercial VTERM(2) Terminal Voltage -0.5 to +7.0 with Respect to GND VTERM(3) Terminal Voltage -0.5 to with Respect to VCC +0.5 GND TA Operating 0 to +70 Temperature TBIAS Temperature -55 to +125 Under Bias TSTG Storage -55 to +125 Temperature PT Power Dissipation 0.5 IOUT DC Output Current -60 to +120 Military -0.5 to +7.0 Unit V CAPACITANCE (TA = +25C, f = 1.0MHz) Symbol Parameter(1) CIN Input Capacitance COUT Output Capacitance Conditions VIN = 0V VOUT = 0V Typ. 6 8 Max. Unit 10 pF 12 pF 2573 lnk 04 -0.5 to VCC +0.5 -55 to +125 -65 to +135 -65 to +150 0.5 -60 to +120 V C C C W mA NOTE: 1. This parameter is measured at characterization but not tested. 2573 lnk 03 NOTES: 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. No terminal voltage may exceed VCC by +0.5V unless otherwise noted. 2. Input and VCC terminals only. 3. Outputs and I/O terminals only. 6.22 2 IDT54/74FCT827AT/BT/CT/DT, IDT54/74FCT2827AT/BT/CT HIGH-PERFORMANCE CMOS BUFFERS MILITARY AND COMMERCIAL TEMPERATURE RANGES DC ELECTRICAL CHARACTERISTICS OVER OPERATING RANGE Following Conditions Apply Unless Otherwise Specified: Commercial: TA = 0C to +70C, VCC = 5.0V 5%; Military: TA = -55C to +125C, VCC = 5.0V 10% Symbol VIH VIL II H II L IOZH IOZL II VIK VH ICC Parameter Input HIGH Level Input LOW Level Input HIGH Current(4) Input LOW Current (4) High Impedance Output Current (3-State Output Input HIGH pins) (4) VCC = Min., IIN = -18mA -- Test Conditions(1) Guaranteed Logic HIGH Level Guaranteed Logic LOW Level VCC = Max. VCC = Max. VI = 2.7V VI = 0.5V VO = 2.7V VO = 0.5V VCC = Max., VI = VCC (Max.) Min. 2.0 -- -- -- -- -- -- -- -- -- Typ.(2) -- -- -- -- -- -- -- -0.7 200 0.01 Max. -- 0.8 1 1 1 1 1 -1.2 -- 1 Unit V V A A A V mV mA 2573 lnk 05 Current(4) Clamp Diode Voltage Input Hysteresis Quiescent Power Supply Current VCC = Max., VIN = GND or VCC OUTPUT DRIVE CHARACTERISTICS FOR FCT827T Symbol VOH Parameter Output HIGH Voltage Test Conditions(1) VCC = Min. IOH = -6mA MIL. VIN = VIH or VIL IOH = -8mA COM'L. IOH = -12mA MIL. IOH = -15mA COM'L. VCC = Min. IOL = 32mA MIL. VIN = VIH or VIL IOL = 48mA COM'L. VCC = Max., VO = GND (3) Min. 2.4 2.0 -- -60 Typ.(2) 3.3 3.0 0.3 -120 Max. -- -- 0.5 -225 Unit V V V mA 2573 lnk 06 VOL IOS Output LOW Voltage Short Circuit Current OUTPUT DRIVE CHARACTERISTICS FOR FCT2827T Symbol IODL IODH VOH VOL Parameter Output LOW Current Output HIGH Current Output HIGH Voltage Output LOW Voltage Test Conditions(1) VCC = 5V, VIN = VIH or VIL, VOUT = 1.5V (3) VCC = 5V, VIN = VIH or V IL, VOUT = 1.5V (3) VCC = Min. VIN = VIH or VIL VCC = Min. VIN = VIH or VIL IOH = -12mA MIL. IOH = -15mA COM'L. IOL = 12mA Min. 16 -16 2.4 -- Typ.(2) 48 -48 3.3 0.3 Max. -- -- -- 0.50 Unit mA mA V V 2573 lnk 07 NOTES: 1. For conditions shown as Max. or Min., use appropriate value specified under Electrical Characteristics for the applicable device type. 2. Typical values are at Vcc = 5.0V, +25C ambient. 3. Not more than one output should be shorted at one time. Duration of the short circuit test should not exceed one second. 4. The test limit for this parameter is 5A at TA = -55C. 6.22 3 IDT54/74FCT827AT/BT/CT/DT, IDT54/74FCT2827AT/BT/CT HIGH-PERFORMANCE CMOS BUFFERS MILITARY AND COMMERCIAL TEMPERATURE RANGES POWER SUPPLY CHARACTERISTICS Symbol ICC ICCD Parameter Quiescent Power Supply Current TTL Inputs HIGH Test Conditions(1) VCC = Max. VIN = 3.4V(3) VCC = Max. Outputs Open OE1 = OE2 = GND One Input Toggling 50% Duty Cycle VCC = Max. Outputs Open fi = 10MHz 50% Duty Cycle Min. -- -- -- Typ.(2) 0.5 0.15 0.06 Max. 2.0 0.25 0.12 Unit mA mA/ MHz Dynamic Power Supply Current (4) VIN = VCC FCT827T VIN = GND FCT2827T IC Total Power Supply Current (6) VIN = VCC FCT827T -- -- -- -- -- -- -- -- 1.5 0.6 1.8 0.9 3.0 1.2 5.0 3.2 3.5 2.2 4.5 3.2 6.0 (5) 3.4 (5) 14.0 (5) 11.4 (5) mA VIN = GND FCT2827T VIN = 3.4V FCT827T OE1 = OE2 = GND One Bit Toggling VCC = Max. Outputs Open fi = 2.5MHz 50% Duty Cycle VIN = GND FCT2827T VIN = VCC FCT827T VIN = GND FCT2827T VIN = 3.4V FCT827T OE1 = OE2 = GND Eight Bits Toggling VIN = GND FCT2827T NOTES: 1. For conditions shown as Max. or Min., use appropriate value specified under Electrical Characteristics for the applicable device type. 2. Typical values are at VCC = 5.0V, +25C ambient. 3. Per TTL driven input (VIN = 3.4V). All other inputs at VCC or GND. 4. This parameter is not directly testable, but is derived for use in Total Power Supply Calculations. 5. Values for these conditions are examples of the ICC formula. These limits are guaranteed but not tested. 6. IC = IQUIESCENT + IINPUTS + IDYNAMIC IC = ICC + ICC DHNT + ICCD (fCP/2 + fiNi) ICC = Quiescent Current ICC = Power Supply Current for a TTL High Input (VIN = 3.4V) DH = Duty Cycle for TTL Inputs High NT = Number of TTL Inputs at DH ICCD = Dynamic Current Caused by an Input Transition Pair (HLH or LHL) fCP = Clock Frequency for Register Devices (Zero for Non-Register Devices) fi = Input Frequency Ni = Number of Inputs at fi All currents are in milliamps and all frequencies are in megahertz. 2573 tbl 08 6.22 4 IDT54/74FCT827AT/BT/CT/DT, IDT54/74FCT2827AT/BT/CT HIGH-PERFORMANCE CMOS BUFFERS MILITARY AND COMMERCIAL TEMPERATURE RANGES SWITCHING CHARACTERISTICS OVER OPERATING RANGE FCT827AT/FCT2827AT Com'l. Symbol Parameter Condition(1) Min.(2) Max. Mil. Min.(2) Max. FCT827BT/FCT2827BT Com'l. Min.(2) Max. Mil. Min.(2) Max. Unit tPLH tPHL Propagation Delay DI to YI tPZH tPZL Output Enable Time OEI to YI tPHZ tPLZ Output Disable Time OEI to YI CL = 50pF RL = 500 CL = 300pF(3) RL = 500 CL = 50pF RL = 500 CL = 300pF(3) RL = 500 CL = 5pF(3) RL = 500 CL = 50pF RL = 500 1.5 1.5 1.5 1.5 1.5 1.5 8.0 15.0 12.0 23.0 9.0 10.0 1.5 1.5 1.5 1.5 1.5 1.5 9.0 17.0 13.0 25.0 9.0 10.0 1.5 1.5 1.5 1.5 1.5 1.5 5.0 13.0 8.0 15.0 6.0 7.0 1.5 1.5 1.5 1.5 1.5 1.5 6.5 14.0 9.0 16.0 7.0 8.0 ns ns ns 2573 tbl 09 FCT827CT/FCT2827CT Com'l. Symbol Parameter Condition(1) Min.(2) Max. Mil. Min.(2) Max. Com'l. Min.(2) FCT827DT Mil. Min.(2) Max. Unit Max. tPLH tPHL Propagation Delay DI to YI tPZH tPZL Output Enable Time OEI to YI tPHZ tPLZ Output Disable Time OEI to YI CL = 50pF RL = 500 CL = 300pF(3) RL = 500 CL = 50pF RL = 500 CL = 300pF(3) RL = 500 CL = 5pF(3) RL = 500 CL = 50pF RL = 500 1.5 1.5 1.5 1.5 1.5 1.5 4.4 10.0 7.0 14.0 5.7 6.0 1.5 1.5 1.5 1.5 1.5 1.5 5.0 11.0 8.0 15.0 6.7 7.0 1.5 1.5 1.5 1.5 1.5 1.5 3.8 7.5 5.0 9.0 4.3 4.3 -- -- -- -- -- -- -- -- -- -- -- -- ns ns ns NOTES: 1. See test circuit and waveforms. 2. Minimum limits are guaranteed but not tested on Propagation Delays. 3. These conditions are guaranteed but not tested. 2573 tbl 10 6.22 5 IDT54/74FCT827AT/BT/CT/DT, IDT54/74FCT2827AT/BT/CT HIGH-PERFORMANCE CMOS BUFFERS MILITARY AND COMMERCIAL TEMPERATURE RANGES TEST CIRCUITS AND WAVEFORMS TEST CIRCUITS FOR ALL OUTPUTS V CC 500 VIN Pulse Generator RT D.U.T. 50pF CL 2573 drw 04 SWITCH POSITION Test 7.0V Switch Open Drain Disable Low Enable Low All Other Tests Closed Open VOUT 500 2573 lnk 11 DEFINITIONS: CL= Load capacitance: includes jig and probe capacitance. RT = Termination resistance: should be equal to ZOUT of the Pulse Generator. SET-UP, HOLD AND RELEASE TIMES PULSE WIDTH DATA INPUT TIMING INPUT ASYNCHRONOUS CONTROL PRESET CLEAR ETC. SYNCHRONOUS CONTROL PRESET CLEAR CLOCK ENABLE ETC. tSU tH 3V 1.5V 0V 3V 1.5V 0V 3V 1.5V 0V 3V 1.5V 0V 2573 drw 05 LOW-HIGH-LOW PULSE tW HIGH-LOW-HIGH PULSE 1.5V tREM 1.5V 2573 drw 06 tSU tH PROPAGATION DELAY ENABLE AND DISABLE TIMES ENABLE DISABLE 3V CONTROL INPUT tPZL OUTPUT NORMALLY LOW OUTPUT NORMALLY HIGH SWITCH CLOSED tPZH SWITCH OPEN 1.5V 0V 0V 2573 drw 08 SAME PHASE INPUT TRANSITION tPLH OUTPUT tPLH OPPOSITE PHASE INPUT TRANSITION tPHL tPHL 3V 1.5V 0V VOH 1.5V VOL 3V 1.5V 0V 2573 drw 07 1.5V tPLZ 3.5V 1.5V tPHZ 0.3V VOH 0V 3.5V 0.3V VOL NOTES: 1. Diagram shown for input Control Enable-LOW and input Control DisableHIGH 2. Pulse Generator for All Pulses: Rate 1.0MHz; tF 2.5ns; tR 2.5ns 6.22 6 IDT54/74FCT827AT/BT/CT/DT, IDT54/74FCT2827AT/BT/CT HIGH-PERFORMANCE CMOS BUFFERS MILITARY AND COMMERCIAL TEMPERATURE RANGES ORDERING INFORMATION IDT XX Temp. Range FCT X Family XX Device Type X Package X Process Blank B P D E L SO PY Q 827AT 827BT 827CT 827DT Blank 2 54 74 Commercial MIL-STD-883, Class B Plastic DIP CERDIP CERPACK Leadless Chip Carrier Small Outline IC Shrink Small Outline Package Quarter-size Small Outline Package Non-Inverting 10-Bit Buffer High Drive Balanced Drive -55C to +125C 0C to +70C 2573 drw 09 6.22 7 |
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