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 IDT54/74FCT827AT/BT/CT/DT, IDT54/74FCT2827AT/BT/CT HIGH-PERFORMANCE CMOS BUFFERS
MILITARY AND COMMERCIAL TEMPERATURE RANGES
FAST CMOS 10-BIT BUFFERS
Integrated Device Technology, Inc.
IDT54/74FCT827AT/BT/CT/DT IDT54/74FCT2827AT/BT/CT
FEATURES:
* Common features: - Low input and output leakage 1A (max.) - CMOS power levels - True TTL input and output compatibility - VOH = 3.3V (typ.) - VOL = 0.3V (typ.) - Meets or exceeds JEDEC standard 18 specifications - Product available in Radiation Tolerant and Radiation Enhanced versions - Military product compliant to MIL-STD-883, Class B and DESC listed (dual marked) - Available in DIP, SOIC, SSOP, QSOP, CERPACK and LCC packages * Features for FCT827T: - A, B, C and D speed grades - High drive outputs (-15mA IOH, 48mA IOL) * Features for FCT2827T: - A, B and C speed grades - Resistor outputs (-15mA IOH, 12mA IOL Com.) (-12mA IOH, 12mA IOL Mil.) - Reduced system switching noise
DESCRIPTION:
The FCT827T is built using an advanced dual metal CMOS technology. The FCT827T/FCT2827T 10-bit bus drivers provide highperformance bus interface buffering for wide data/address paths or buses carrying parity. The 10-bit buffers have NANDed output enables for maximum control flexibility. All of the FCT827T high-performance interface family are designed for high-capacitance load drive capability, while providing low-capacitance bus loading at both inputs and outputs. All inputs have clamp diodes to ground and all outputs are designed for low-capacitance bus loading in high-impedance state. The FCT2827T has balanced output drive with current limiting resistors. This offers low ground bounce, minimal undershoot and controlled output fall times-reducing the need for external series terminating resistors. FCT2827T parts are plug-in replacements for FCT827T parts.
FUNCTIONAL BLOCK DIAGRAM
Y0 Y1 Y2 Y3 Y4 Y5 Y6 Y7 Y8 Y9
D0
D1
D2
D3
D4
D5
D6
D7
D8
D9
OE1 OE2
2573 drw 01
The IDT logo is a registered trademark of Integrated Device Technology, Inc.
MILITARY AND COMMERCIAL TEMPERATURE RANGES
(c)1995 Integrated Device Technology, Inc.
AUGUST 1995
DSC-4217/5
6.22 6.22
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IDT54/74FCT827AT/BT/CT/DT, IDT54/74FCT2827AT/BT/CT HIGH-PERFORMANCE CMOS BUFFERS
MILITARY AND COMMERCIAL TEMPERATURE RANGES
PIN CONFIGURATIONS
INDEX
2573 drw 02
D8 D9 GND NC OE2 Y9 Y8
OE1 D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 GND
1 2 3 P24-1 4 D24-1 5 SO24-2 6 SO24-7 7 SO24-8 & 8 9 E24-1 10 11 12
24 23 22 21 20 19 18 17 16 15 14 13
VCC Y0 Y1 Y2 Y3 Y4 Y5 Y6 Y7 Y8 Y9 OE2
D2 D3 D4 NC D5 D6 D7
432 1 28 27 26 25 5 24 6 23 7 8 22 L28-1 9 21 20 10 19 11 1213 14 15 16 17 18
D1 D0 OE1 NC VCC Y0 Y1
Y2 Y3 Y4 NC Y5 Y6 Y7
2573 drw 03
DIP/SOIC/SSOP/QSOP/CERPACK TOP VIEW
LCC TOP VIEW
PIN DESCRIPTION
Names
I/O
FUNCTION TABLE(1)
Inputs Output DI L H X X YI L H Z Z Function Transparent Three-State
2573 tbl 02
OEI
DI YI
I
I O
Description When both are LOW the outputs are enabled. When either one or both are HIGH the outputs are High Z. 10-bit data input. 10-bit data output.
2573 tbl 01
OE OE1
L L H X
OE OE2
L L X H
NOTE: 1. H = HIGH, L = LOW, X = Don't Care, Z = High Impedance
ABSOLUTE MAXIMUM RATINGS(1)
Symbol Rating Commercial VTERM(2) Terminal Voltage -0.5 to +7.0 with Respect to GND VTERM(3) Terminal Voltage -0.5 to with Respect to VCC +0.5 GND TA Operating 0 to +70 Temperature TBIAS Temperature -55 to +125 Under Bias TSTG Storage -55 to +125 Temperature PT Power Dissipation 0.5 IOUT DC Output Current -60 to +120 Military -0.5 to +7.0 Unit V
CAPACITANCE (TA = +25C, f = 1.0MHz)
Symbol Parameter(1) CIN Input Capacitance COUT Output Capacitance Conditions VIN = 0V VOUT = 0V Typ. 6 8 Max. Unit 10 pF 12
pF
2573 lnk 04
-0.5 to VCC +0.5 -55 to +125 -65 to +135 -65 to +150 0.5 -60 to +120
V C C C W mA
NOTE: 1. This parameter is measured at characterization but not tested.
2573 lnk 03 NOTES: 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. No terminal voltage may exceed VCC by +0.5V unless otherwise noted. 2. Input and VCC terminals only. 3. Outputs and I/O terminals only.
6.22
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IDT54/74FCT827AT/BT/CT/DT, IDT54/74FCT2827AT/BT/CT HIGH-PERFORMANCE CMOS BUFFERS
MILITARY AND COMMERCIAL TEMPERATURE RANGES
DC ELECTRICAL CHARACTERISTICS OVER OPERATING RANGE
Following Conditions Apply Unless Otherwise Specified: Commercial: TA = 0C to +70C, VCC = 5.0V 5%; Military: TA = -55C to +125C, VCC = 5.0V 10%
Symbol VIH VIL II H II L IOZH IOZL II VIK VH ICC Parameter Input HIGH Level Input LOW Level Input HIGH Current(4) Input LOW Current (4) High Impedance Output Current (3-State Output Input HIGH pins) (4) VCC = Min., IIN = -18mA
--
Test Conditions(1) Guaranteed Logic HIGH Level Guaranteed Logic LOW Level VCC = Max. VCC = Max. VI = 2.7V VI = 0.5V VO = 2.7V VO = 0.5V VCC = Max., VI = VCC (Max.)
Min. 2.0 -- -- -- -- -- -- -- -- --
Typ.(2) -- -- -- -- -- -- -- -0.7 200 0.01
Max. -- 0.8 1 1 1 1 1 -1.2 -- 1
Unit V V A A A V mV mA
2573 lnk 05
Current(4)
Clamp Diode Voltage Input Hysteresis Quiescent Power Supply Current
VCC = Max., VIN = GND or VCC
OUTPUT DRIVE CHARACTERISTICS FOR FCT827T
Symbol VOH Parameter Output HIGH Voltage Test Conditions(1) VCC = Min. IOH = -6mA MIL. VIN = VIH or VIL IOH = -8mA COM'L. IOH = -12mA MIL. IOH = -15mA COM'L. VCC = Min. IOL = 32mA MIL. VIN = VIH or VIL IOL = 48mA COM'L. VCC = Max., VO = GND (3) Min. 2.4 2.0 -- -60 Typ.(2) 3.3 3.0 0.3 -120 Max. -- -- 0.5 -225 Unit V V V mA
2573 lnk 06
VOL IOS
Output LOW Voltage Short Circuit Current
OUTPUT DRIVE CHARACTERISTICS FOR FCT2827T
Symbol IODL IODH VOH VOL Parameter Output LOW Current Output HIGH Current Output HIGH Voltage Output LOW Voltage Test Conditions(1) VCC = 5V, VIN = VIH or VIL, VOUT = 1.5V (3) VCC = 5V, VIN = VIH or V IL, VOUT = 1.5V (3) VCC = Min. VIN = VIH or VIL VCC = Min. VIN = VIH or VIL IOH = -12mA MIL. IOH = -15mA COM'L. IOL = 12mA Min. 16 -16 2.4 -- Typ.(2) 48 -48 3.3 0.3 Max. -- -- -- 0.50 Unit mA mA V V
2573 lnk 07
NOTES: 1. For conditions shown as Max. or Min., use appropriate value specified under Electrical Characteristics for the applicable device type. 2. Typical values are at Vcc = 5.0V, +25C ambient. 3. Not more than one output should be shorted at one time. Duration of the short circuit test should not exceed one second. 4. The test limit for this parameter is 5A at TA = -55C.
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IDT54/74FCT827AT/BT/CT/DT, IDT54/74FCT2827AT/BT/CT HIGH-PERFORMANCE CMOS BUFFERS
MILITARY AND COMMERCIAL TEMPERATURE RANGES
POWER SUPPLY CHARACTERISTICS
Symbol ICC ICCD Parameter
Quiescent Power Supply Current TTL Inputs HIGH
Test Conditions(1) VCC = Max. VIN = 3.4V(3) VCC = Max. Outputs Open OE1 = OE2 = GND One Input Toggling 50% Duty Cycle VCC = Max. Outputs Open fi = 10MHz 50% Duty Cycle
Min. -- -- --
Typ.(2) 0.5 0.15 0.06
Max. 2.0 0.25 0.12
Unit mA mA/ MHz
Dynamic Power Supply Current (4)
VIN = VCC FCT827T VIN = GND FCT2827T
IC
Total Power Supply Current (6)
VIN = VCC
FCT827T
-- -- -- -- -- -- -- --
1.5 0.6 1.8 0.9 3.0 1.2 5.0 3.2
3.5 2.2 4.5 3.2 6.0 (5) 3.4 (5) 14.0 (5) 11.4 (5)
mA
VIN = GND FCT2827T VIN = 3.4V FCT827T
OE1 = OE2 = GND
One Bit Toggling VCC = Max. Outputs Open fi = 2.5MHz 50% Duty Cycle
VIN = GND FCT2827T VIN = VCC FCT827T
VIN = GND FCT2827T VIN = 3.4V FCT827T
OE1 = OE2 = GND
Eight Bits Toggling
VIN = GND FCT2827T
NOTES: 1. For conditions shown as Max. or Min., use appropriate value specified under Electrical Characteristics for the applicable device type. 2. Typical values are at VCC = 5.0V, +25C ambient. 3. Per TTL driven input (VIN = 3.4V). All other inputs at VCC or GND. 4. This parameter is not directly testable, but is derived for use in Total Power Supply Calculations. 5. Values for these conditions are examples of the ICC formula. These limits are guaranteed but not tested. 6. IC = IQUIESCENT + IINPUTS + IDYNAMIC IC = ICC + ICC DHNT + ICCD (fCP/2 + fiNi) ICC = Quiescent Current ICC = Power Supply Current for a TTL High Input (VIN = 3.4V) DH = Duty Cycle for TTL Inputs High NT = Number of TTL Inputs at DH ICCD = Dynamic Current Caused by an Input Transition Pair (HLH or LHL) fCP = Clock Frequency for Register Devices (Zero for Non-Register Devices) fi = Input Frequency Ni = Number of Inputs at fi All currents are in milliamps and all frequencies are in megahertz.
2573 tbl 08
6.22
4
IDT54/74FCT827AT/BT/CT/DT, IDT54/74FCT2827AT/BT/CT HIGH-PERFORMANCE CMOS BUFFERS
MILITARY AND COMMERCIAL TEMPERATURE RANGES
SWITCHING CHARACTERISTICS OVER OPERATING RANGE
FCT827AT/FCT2827AT Com'l. Symbol Parameter Condition(1) Min.(2) Max. Mil. Min.(2) Max. FCT827BT/FCT2827BT Com'l. Min.(2) Max. Mil. Min.(2) Max. Unit
tPLH tPHL
Propagation Delay DI to YI
tPZH tPZL
Output Enable Time OEI to YI
tPHZ tPLZ
Output Disable Time OEI to YI
CL = 50pF RL = 500 CL = 300pF(3) RL = 500 CL = 50pF RL = 500 CL = 300pF(3) RL = 500 CL = 5pF(3) RL = 500 CL = 50pF RL = 500
1.5 1.5 1.5 1.5 1.5 1.5
8.0 15.0 12.0 23.0 9.0 10.0
1.5 1.5 1.5 1.5 1.5 1.5
9.0 17.0 13.0 25.0 9.0 10.0
1.5 1.5 1.5 1.5 1.5 1.5
5.0 13.0 8.0 15.0 6.0 7.0
1.5 1.5 1.5 1.5 1.5 1.5
6.5 14.0 9.0 16.0 7.0 8.0
ns
ns
ns
2573 tbl 09
FCT827CT/FCT2827CT Com'l. Symbol Parameter Condition(1) Min.(2) Max. Mil. Min.(2) Max. Com'l. Min.(2)
FCT827DT Mil. Min.(2) Max. Unit
Max.
tPLH tPHL
Propagation Delay DI to YI
tPZH tPZL
Output Enable Time OEI to YI
tPHZ tPLZ
Output Disable Time OEI to YI
CL = 50pF RL = 500 CL = 300pF(3) RL = 500 CL = 50pF RL = 500 CL = 300pF(3) RL = 500 CL = 5pF(3) RL = 500 CL = 50pF RL = 500
1.5 1.5 1.5 1.5 1.5 1.5
4.4 10.0 7.0 14.0 5.7 6.0
1.5 1.5 1.5 1.5 1.5 1.5
5.0 11.0 8.0 15.0 6.7 7.0
1.5 1.5 1.5 1.5 1.5 1.5
3.8 7.5 5.0 9.0 4.3 4.3
-- -- -- -- -- --
-- -- -- -- -- --
ns
ns
ns
NOTES: 1. See test circuit and waveforms. 2. Minimum limits are guaranteed but not tested on Propagation Delays. 3. These conditions are guaranteed but not tested.
2573 tbl 10
6.22
5
IDT54/74FCT827AT/BT/CT/DT, IDT54/74FCT2827AT/BT/CT HIGH-PERFORMANCE CMOS BUFFERS
MILITARY AND COMMERCIAL TEMPERATURE RANGES
TEST CIRCUITS AND WAVEFORMS TEST CIRCUITS FOR ALL OUTPUTS
V CC 500 VIN Pulse Generator RT D.U.T. 50pF CL
2573 drw 04
SWITCH POSITION
Test
7.0V
Switch
Open Drain Disable Low Enable Low All Other Tests
Closed Open
VOUT
500
2573 lnk 11 DEFINITIONS: CL= Load capacitance: includes jig and probe capacitance. RT = Termination resistance: should be equal to ZOUT of the Pulse Generator.
SET-UP, HOLD AND RELEASE TIMES
PULSE WIDTH
DATA INPUT TIMING INPUT ASYNCHRONOUS CONTROL PRESET CLEAR ETC. SYNCHRONOUS CONTROL PRESET CLEAR CLOCK ENABLE ETC. tSU
tH
3V 1.5V 0V 3V 1.5V 0V 3V 1.5V 0V 3V 1.5V 0V
2573 drw 05
LOW-HIGH-LOW PULSE tW HIGH-LOW-HIGH PULSE
1.5V
tREM
1.5V
2573 drw 06
tSU
tH
PROPAGATION DELAY
ENABLE AND DISABLE TIMES
ENABLE DISABLE 3V CONTROL INPUT tPZL OUTPUT NORMALLY LOW OUTPUT NORMALLY HIGH SWITCH CLOSED tPZH SWITCH OPEN 1.5V 0V 0V
2573 drw 08
SAME PHASE INPUT TRANSITION tPLH OUTPUT tPLH OPPOSITE PHASE INPUT TRANSITION tPHL tPHL
3V 1.5V 0V VOH 1.5V VOL 3V 1.5V 0V
2573 drw 07
1.5V tPLZ 3.5V 1.5V tPHZ 0.3V VOH 0V 3.5V 0.3V VOL
NOTES: 1. Diagram shown for input Control Enable-LOW and input Control DisableHIGH 2. Pulse Generator for All Pulses: Rate 1.0MHz; tF 2.5ns; tR 2.5ns
6.22
6
IDT54/74FCT827AT/BT/CT/DT, IDT54/74FCT2827AT/BT/CT HIGH-PERFORMANCE CMOS BUFFERS
MILITARY AND COMMERCIAL TEMPERATURE RANGES
ORDERING INFORMATION
IDT XX Temp. Range FCT X Family XX Device Type X Package X Process Blank B P D E L SO PY Q 827AT 827BT 827CT 827DT Blank 2 54 74 Commercial MIL-STD-883, Class B Plastic DIP CERDIP CERPACK Leadless Chip Carrier Small Outline IC Shrink Small Outline Package Quarter-size Small Outline Package Non-Inverting 10-Bit Buffer
High Drive Balanced Drive -55C to +125C 0C to +70C
2573 drw 09
6.22
7


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